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The BFP420H6327XTSA1 is a low noise silicon bipolar RF transistor designed for high gain and low noise amplifiers. It features a transition frequency of 25 GHz and a minimum noise figure of 1.1 dB at 1.8 GHz. The device operates with a collector-emitter voltage of 4.5 V and a maximum collector current of 60 mA. Total power dissipation reaches 210 mW at a case temperature of 98 °C, with a junction temperature limit of 150 °C. It utilizes an SOT-343 package and meets AEC-Q101 qualification standards.
Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm package type and reel specifications. Ensure compliance with RoHS and halogen-free requirements as stated in the datasheet. Confirm AEC-Q101 qualification status directly from the manufacturer's quality reports before integration into automotive or safety-critical designs.
Select this component when designing circuits requiring a minimum noise figure of 1.1 dB at 1.8 GHz. The 25 GHz transition frequency supports broadband RF applications. Verify that the 4.5 V collector-emitter voltage rating aligns with the system supply constraints. Utilize the provided SPICE GP model for accurate simulation of S-parameters and noise characteristics up to 10 GHz.
This part belongs to the BFP420 series of low noise silicon bipolar RF transistors manufactured by Infineon Technologies. The series is engineered for wireless communication systems where superior flexibility and high performance are required. The H6327XTSA1 designation specifies the surface-mount packaging and tape-and-reel delivery format compatible with automated assembly processes.
Public confirmed substitute part numbers are not available in the verified source material.