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The BFP450E6327BTSA1 is an NPN silicon RF bipolar junction transistor manufactured by Infineon Technologies. It operates with a maximum collector-emitter voltage of 4.5 V and supports a continuous collector current of 50 mA. The device features a transition frequency of 30 GHz and a maximum power dissipation of 200 mW. It utilizes a PG-SOT343-3D surface-mount package, suitable for compact designs. The component functions within a temperature range of -65°C to +150°C.
Verify the specific suffix BTSA1 against official Infineon documentation to confirm exact reel specifications and tape-and-reel dimensions. Confirm RoHS compliance status through the manufacturer's material declaration. Check for obsolescence notices as this component type may have limited availability or end-of-life status in certain regions.
Select this component when designing circuits requiring high gain at microwave frequencies with low noise figures. Ensure the PCB layout accommodates the SOT-343 footprint and thermal requirements for 200 mW dissipation. Compare noise figure specifications against system sensitivity requirements to validate suitability for the intended RF band.
This part belongs to the BFP450 series of RF transistors from Infineon. It shares the base BFP450 designation but includes specific ordering suffixes indicating packaging and variant details. It is distinct from similar models like the BFP460 or BFP540 which offer different frequency or voltage characteristics.
Publicly confirmed substitute part numbers are not available in the provided source data. Consult Infineon's official replacement guide or distributor cross-reference lists for verified alternatives.