BFP490E6327

Overview

The BFP490E6327 is an NPN silicon bipolar RF transistor manufactured by Infineon Technologies. It operates at a maximum frequency of 17.5 GHz with a transition frequency supporting high-speed applications. The device features a collector-emitter breakdown voltage (Vceo) of 4.5 V and an emitter-base voltage (Vebo) of 1.5 V. Maximum continuous collector current is rated at 600 mA, while maximum power dissipation reaches 1 W. Operating temperature range spans from -65 °C to +150 °C. The component utilizes the PG-SCD80-2 surface-mount package.

Feature Summary

• High-frequency operation capability up to 17.5 GHz for RF signal processing
• Robust thermal performance with maximum power dissipation of 1 W
• Wide operating temperature range suitable for demanding environments

Applications

• RF amplifier stages in wireless communication systems
• Signal processing circuits requiring high-frequency gain
• Mobile device front-end modules

Procurement Notes

Verify component authenticity through authorized distribution channels due to potential counterfeit risks. Confirm package integrity and pin alignment against the PG-SCD80-2 specification prior to assembly. Ensure storage conditions maintain moisture sensitivity levels as defined by manufacturer guidelines. Cross-reference datasheet revisions to confirm electrical parameter consistency for critical design implementations.

Selection Notes

Select this component when designing circuits requiring high-frequency NPN amplification with moderate voltage constraints. The 4.5 V breakdown voltage limits suitability for high-voltage applications. Consider the 1 W power dissipation rating for thermal management strategies. Evaluate the PG-SCD80-2 footprint compatibility with existing PCB layouts before finalizing the design choice.

Part Context

This part belongs to Infineon's BFP series of bipolar RF transistors, designed for radio frequency applications. The E6327 suffix typically denotes specific packaging or tape-and-reel configuration details within the product line. These transistors are engineered for linear amplification and switching operations in microwave and RF domains.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official replacement guides or contact manufacturer support for validated alternatives.