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The BFP520E6327BTSA1 is an NPN silicon RF bipolar junction transistor manufactured by Infineon Technologies. It is housed in a PG-SOT343-3D surface-mount package and operates with a maximum collector-emitter voltage of 5V and a collector current of 80mA. The device features a transition frequency of 30GHz and a maximum power dissipation of 250mW. DC current gain is specified at a minimum of 50 under standard test conditions. The component is qualified to AEC-Q100 automotive standards and supports a junction temperature up to 150°C.
Verify the specific suffix E6327BTSA1 against official Infineon documentation to confirm exact tape-and-reel specifications and lot traceability requirements. Ensure that the AEC-Q100 qualification status aligns with your system's reliability standards before finalizing procurement orders.
Select this component when a 30GHz transition frequency and 5V breakdown voltage are required in a SOT-343 footprint. Compare noise figure and gain characteristics against alternative NPN RF transistors to ensure compatibility with the target circuit impedance and power budget constraints.
This part belongs to the BFP520 series of RF bipolar transistors from Infineon. The series is designed for high-performance radio frequency applications requiring small form factors and robust electrical characteristics for signal processing tasks.
Consult official Infineon substitution guides for verified alternatives. Cross-reference pinouts and thermal characteristics if considering generic equivalents, as direct functional swaps may require circuit re-evaluation.