BFP540ESDH6327XTSA1

Overview

The BFP540ESDH6327XTSA1 is a surface-mount robust silicon NPN RF bipolar transistor based on the grounded emitter SIEGET™ technology. It features a transition frequency of 30 GHz, a maximum collector-emitter voltage of 4.5 V, and a total power dissipation of 250 mW. The device provides a minimum noise figure of 0.9 dB at 1.8 GHz with 5 mA collector current and a typical high gain of 21.5 dB at 1.8 GHz with 20 mA collector current. It offers an output third-order intercept point (OIP3) of 24.5 dBm at 1.8 GHz under 20 mA bias conditions.

Feature Summary

• High ESD robustness with typical 1 kV Human Body Model rating
• Low noise figure optimized for sensitive receiver front-ends
• High gain performance suitable for broadband amplification

Applications

• Radio-frequency oscillators such as local oscillators in LNBs
• Broadband low noise amplifiers for CATV, DVB-T, DAB/DMB, and FM/AM radio
• Low noise amplifiers for wireless communications including cordless phones

Procurement Notes

Verify the complete ordering code matches the required package and tape-and-reel specifications. Confirm that the component meets industrial application standards per JEDEC JESD47, JESD22, and J-STD-020. Ensure handling precautions are observed due to electrostatic discharge sensitivity during assembly and testing procedures.

Selection Notes

Select this component when a low-noise, high-gain NPN transistor with integrated ESD protection is required. The SOT343 package suits compact surface-mount designs. Evaluate the 4.5 V collector-emitter voltage limit against circuit supply rails. Consider the 250 mW power dissipation capability relative to thermal management constraints in the final enclosure.

Part Context

This part belongs to Infineon’s fifth-generation RF bipolar transistor family. It utilizes the SIEGET™ grounded emitter architecture to balance cost-effectiveness with ease of use. The device is specifically engineered to maintain competitive pricing while delivering high robustness against electrostatic discharge events common in manufacturing environments.

Replacement Considerations

Consult official replacement lists for variants sharing identical pin configurations and electrical characteristics. Verify that any substitute maintains the same SOT343 footprint and meets the required 30 GHz transition frequency threshold.