BFP540FESDH6327XTSA1

BFP540FESDH6327XTSA1

$0.41
  • Description:RF TRANS NPN 5V 30GHZ 4-TSFP
  • Series:-

SKU:75f55003567c Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 5V 30GHZ 4-TSFP
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):5V
  • Frequency - Transition:30GHz
  • Noise Figure (dB Typ @ f):0.9dB ~ 1.4dB @ 1.8GHz
  • Gain:20dB
  • Power - Max:250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 20mA, 3.5V
  • Current - Collector (Ic) (Max):80mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, Flat Leads
  • Supplier Device Package:4-TSFP
  • Grade:-
  • Qualification:-

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BFP540FESDH6327XTSA1

Overview

The BFP540FESDH6327XTSA1 is a Silicon NPN RF bipolar transistor from the BFP540 series, manufactured by Infineon Technologies. It utilizes SiGe:C technology for high-performance applications. The device operates at frequencies up to 30 GHz with a minimum DC collector/base gain (hfe) of 50. Key electrical limits include a maximum collector-emitter voltage (VCEO) of 4.5 V, an emitter-base voltage (VEBO) of 1 V, and a continuous collector current of 80 mA. It features a power dissipation rating of 250 mW and is qualified under AEC-Q100 standards. The component is housed in a TSFP-4 surface-mount package.

Feature Summary

  • Designed for high-gain low-noise amplifier applications using reliable SiGe:C technology
  • AEC-Q100 qualified for automotive electronics reliability requirements
  • Optimized for operation at radio frequencies up to 30 GHz

Applications

  • High-gain low-noise amplifier circuits
  • RF signal processing stages
  • Automotive communication systems

Procurement Notes

Verify component status carefully as this part number is listed as obsolete or end-of-life by the manufacturer. Confirm availability through authorized distributors or secondary markets if immediate procurement is required. Ensure that any replacement strategy accounts for potential supply chain constraints associated with discontinued semiconductor components.

Selection Notes

Select this component specifically for designs requiring high-frequency performance with low noise characteristics in an automotive context. Consider the low voltage ratings and thermal dissipation limits when designing the circuit. Verify compatibility with existing PCB footprints for the TSFP-4 package before finalizing the design.

Part Context

This transistor belongs to the BFP540 series of RF bipolar transistors produced by Infineon Technologies. The series is characterized by the use of Silicon Germanium Carbon (SiGe:C) technology, which provides superior high-frequency performance compared to standard silicon devices. The specific suffix indicates the tape-and-reel packaging configuration.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, direct replacements may require consulting official Infineon obsolescence notices or evaluating alternative RF transistor families with similar frequency and gain specifications.

BFP540FESDH6327XTSA1BFP540FESDH6327XTSA1
$0.41
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