BFP620E7764BTSA1

Overview

The BFP620E7764BTSA1 is an NPN Silicon Germanium RF transistor manufactured by Infineon Technologies. It operates with a maximum collector-emitter voltage of 2.3 V and a continuous collector current of 80 mA. The device features a transition frequency of 65 GHz at 1 GHz test conditions. Key electrical parameters include a minimum noise figure of 0.7 dB at 1.8 GHz and 1.3 dB at 6 GHz, alongside a maximum stable gain of 21.5 dB at 1.8 GHz. Total power dissipation is rated at 185 mW, with a junction temperature limit of 150 °C. It utilizes the SOT-343 package.

Feature Summary

• Highly linear low noise RF transistor based on SiGe:C technology
• Provides outstanding performance for a wide range of wireless applications
• Accurate SPICE GP model enables effective design in process

Applications

• CDMA applications
• WLAN applications

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance and AEC-Q101 qualification status prior to integration. Ensure proper ESD handling precautions are observed during storage and assembly due to device sensitivity.

Selection Notes

Select this component for low voltage wireless designs requiring high linearity and low noise. Evaluate thermal resistance constraints relative to total power dissipation limits. Verify that the operating frequency aligns with the specified transition frequency and gain characteristics for optimal circuit performance.

Part Context

This part belongs to the BFP620 series of NPN Silicon Germanium RF transistors. It shares core specifications with variants such as BFP620H7764XTSA1 but differs in specific ordering suffixes which may indicate packaging or testing variations. The series is designed for high-volume production environments.

Replacement Considerations

Public confirmed substitute: MRF428 (MACOM Technology Solutions). Verify pinout compatibility and electrical parameter alignment before substitution.

FAQ

What is the maximum stable gain at 1.8 GHz?

The maximum stable gain (Gms) is 21.5 dB at 1.8 GHz under standard test conditions.

Is the BFP620 qualified for automotive applications?

Yes, the device is qualified according to AEC-Q101 standards.

What is the typical DC current gain?

The typical DC current gain (hFE) is 180 when measured at IC = 50 mA and VCE = 1.5 V.