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Product Detailed Parameters
- Description：RF TRANS NPN 4.5V 40GHZ 4-TSFP
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：4.5V
- Frequency - Transition：40GHz
- Noise Figure (dB Typ @ f)：0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
- Gain：23dB
- Power - Max：200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：110 @ 30mA, 3V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：4-SMD, Flat Leads
- Supplier Device Package：4-TSFP
- Grade：-
- Qualification：-
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Overview
The BFP640FE6327 is an NPN Silicon Germanium RF transistor manufactured by Infineon Technologies. It utilizes 70 GHz fT technology and features a TSFP-4 package with gold metallization for high reliability. The device is qualified according to AEC-Q101 standards. Key electrical parameters include a collector-emitter breakdown voltage of 4 V, a maximum collector current of 50 mA, and a total power dissipation of 200 mW. At 1.8 GHz, it provides a noise figure of 0.65 dB and a maximum stable gain of 23 dB.
Feature Summary
- High gain low noise RF transistor
- Outstanding performance for a wide range of wireless applications
- Ideal for CDMA and WLAN applications
Applications
- CDMA applications
- WLAN applications
Procurement Notes
Verify the exact part number suffix against official documentation, as ordering codes may vary. Confirm component availability status directly with the manufacturer or authorized distributors before finalizing procurement plans. Ensure handling precautions are observed due to electrostatic discharge sensitivity.
Selection Notes
Select this component for designs requiring high stability and low noise in the 1.8 GHz to 6 GHz range. Verify that the operating conditions remain within the specified maximum ratings, particularly the 4 V collector-emitter voltage limit. Ensure thermal management supports the 200 mW power dissipation capability in the target application environment.
Part Context
This component belongs to the BFP640 series of RF bipolar transistors from Infineon Technologies. It is designed specifically for high-frequency wireless communication systems. The TSFP-4 package allows for surface mount integration into compact circuit boards.
Replacement Considerations
Consult official Infineon documentation for verified substitute part numbers. Do not assume cross-compatibility with other RF transistors without verifying pin configurations and electrical specifications.
FAQ
What is the transition frequency (fT) of the BFP640F?
The transition frequency is typically 40 GHz at IC = 30 mA and VCE = 3 V.
Is the BFP640F RoHS compliant?
Yes, the package is Pb-free and RoHS compliant.
What is the maximum collector-base voltage?
The maximum collector-base voltage (VCBO) is 13 V.
