BFP640H6327XTSA1

Overview

The BFP640H6327XTSA1 is a surface-mount high linearity silicon NPN RF bipolar transistor utilizing SiGe:C technology. It features a transition frequency (fT) of 42 GHz at VCE = 3 V and IC = 30 mA. The device provides a minimum noise figure (NFmin) of 0.55 dB at 450 MHz, 3 V, and 6 mA collector current. Maximum power gain reaches 33 dB at 450 MHz with 25 mA bias. Third-order output intercept point (OIP3) is 23.5 dBm at 450 MHz and 26.5 dBm at 1.9 GHz under specified conditions. Collector-emitter breakdown voltage (V(BR)CEO) is 4.1 V. Total power dissipation is rated at 200 mW.

Feature Summary

• High linearity characteristics optimized for low current operation
• SiGe:C technology enabling high transition frequency up to 42 GHz
• Low noise figure suitable for sensitive receiver front-ends

Applications

• Low noise amplifiers (LNAs) in GNSS receivers
• LNAs in satellite radio (SDARs, DAB) receivers
• LNAs in multimedia applications such as CATV and FM radio

Procurement Notes

Verify the component against official Infineon datasheet specifications before integration. Confirm that the SOT343 package dimensions match the design footprint. Ensure handling procedures account for ESD sensitivity. Validate electrical parameters against specific operating voltages and currents required by the circuit design.

Selection Notes

Select this component for designs requiring high linearity and low noise at frequencies up to 8 GHz. The device is appropriate for energy-efficient architectures due to its performance at low bias currents. Verify compatibility with 50 Ohm system impedance requirements for optimal gain and noise matching.

Part Context

This part belongs to Infineon’s sixth-generation transistor family. It is designed for cost-competitive RF applications without compromising ease of use. The H6327XTSA1 suffix indicates the specific tape and reel packaging configuration for automated assembly processes.

Replacement Considerations

Consult official Infineon documentation for qualified substitutes. Cross-reference pin configurations and thermal resistance values when considering alternative components.