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The BFP650E6327HTSA1 is an NPN silicon RF bipolar transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-363 package and complies with AEC-Q100 automotive qualification standards. The device features a maximum collector-emitter voltage of 2.5 V, a maximum collector current of 40 mA, and a maximum power dissipation of 180 mW. Its transition frequency reaches up to 90 GHz, supporting high-frequency signal processing. The component operates within a temperature range of -55 °C to +150 °C.
Verify the specific ordering suffix E6327HTSA1 against official Infineon documentation to confirm the exact reel quantity and tape-and-reel specifications. Confirm that the AEC-Q100 qualification status remains active for this specific part number variant before finalizing procurement plans.
Select this component when a low-voltage, high-speed NPN transistor is required for automotive-grade RF designs. Ensure the circuit design accommodates the 2.5 V maximum collector-emitter voltage limit and utilizes the SOT-363 footprint constraints for proper thermal management.
This part belongs to the BFP650 series of RF transistors from Infineon Technologies. It shares the core electrical characteristics of the BFP650 family but includes the E6327HTSA1 suffix indicating specific packaging and automotive compliance details defined by the manufacturer.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pin compatibility and electrical parameters with alternative vendors if sourcing this discontinued or end-of-life component.