BFP650H6327XTSA1

Overview

The BFP650H6327XTSA1 is a high linearity wideband silicon NPN RF bipolar transistor based on SiGe:C technology. It features a transition frequency (fT) of 42 GHz at VCE = 3 V and IC = 70 mA. The device provides a minimum noise figure (NFmin) of 1 dB at 2.4 GHz, 3 V, and 30 mA, with a maximum power gain (Gma) of 17.5 dB under the same conditions. The output third-order intercept point (OIP3) reaches 30 dBm at 2.4 GHz, 3 V, and 70 mA. Absolute maximum ratings include a collector-emitter voltage (VCEO) of 4.0 V and total power dissipation of 500 mW. It is housed in an SOT343 package.

Feature Summary

• High linearity characteristics suitable for energy-efficient designs at frequencies up to 5 GHz
• Low noise performance optimized for low current operation
• Wideband capability enabled by a 42 GHz transition frequency

Applications

• Low noise, high linearity amplifiers in SDARS receivers
• Low noise, high linearity amplifiers for ISM band applications
• Low noise, high linearity amplifiers for multimedia applications such as CATV

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the ordering code matches BFP650H6327XTSA1 exactly. Check datasheet revision history for updates. Ensure handling precautions are followed due to ESD sensitivity. Validate industrial qualification compliance against JEDEC and AEC-Q standards before integration.

Selection Notes

Select this component when designing circuits requiring high linearity and low noise at frequencies up to 5 GHz. The 42 GHz fT supports broadband applications. Ensure biasing conditions align with the specified test parameters for optimal NFmin and OIP3 performance. Consider the SOT343 package constraints for thermal management and PCB footprint design.

Part Context

This part belongs to Infineon’s sixth-generation transistor family. It is specifically engineered for RF applications demanding high linearity and wide bandwidth. The SiGe:C technology enables superior performance compared to standard silicon devices. It serves as a key component in modern communication systems requiring efficient signal processing.

Replacement Considerations

No direct public substitute part numbers are confirmed in the provided documentation. Designers should evaluate other members of the BFP650 series or comparable SiGe RF transistors from Infineon if pin compatibility and electrical specifications must be maintained.

FAQ

What is the transition frequency (fT) of the BFP650?

The transition frequency is 42 GHz, measured at VCE = 3 V and IC = 70 mA.

Is the BFP650 qualified for automotive applications?

Yes, it is qualified for industrial applications according to AEC-Q 101 standards.

What is the maximum collector-emitter voltage (VCEO)?

The absolute maximum rating for VCEO is 4.0 V with an open base.