BFP720ESDH6327XTSA1

Overview

The BFP720ESDH6327XTSA1 is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction Bipolar Transistor (HBT) in an SOT-343 package. It features integrated protection circuits providing 2 kV ESD robustness and high RF input power tolerance of 21 dBm. Key electrical parameters include a collector-emitter breakdown voltage of 4.2 V, a maximum collector current of 30 mA, and a transition frequency of 43 GHz. The device offers a minimum noise figure of 0.65 dB at 2.4 GHz and typical gains ranging from 22.5 dB to 26 dB depending on the operating point.

Feature Summary

• Robust high-performance low-noise amplifier utilizing Infineon's SiGe:C wafer technology
• Integrated protection circuits enhance robustness against electrostatic discharge and high RF input power
• Designed for portable battery-powered applications with reduced power consumption requirements

Applications

• Low Noise Amplifier (LNA) for WLAN, WiMax, UWB, and Bluetooth connectivity
• Satellite communication systems including GPS, Glonass, and satellite radio
• 3G/4G UMTS/LTE mobile phone applications
• Multimedia applications such as mobile TV, CATV, and FM Radio
• Discrete active mixer, amplifier in VCOs, and buffer amplifier

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance and Pb-free status prior to integration. Ensure handling precautions are observed due to ESD sensitivity. Validate that the specific ordering suffix matches the required packaging format for production line compatibility.

Selection Notes

Select this component for designs requiring high linearity and low noise in the sub-10 GHz range. Consider the 4.2 V collector-emitter voltage limit when designing bias networks. Evaluate thermal dissipation capabilities relative to the ambient temperature constraints specified in the datasheet for reliable long-term operation.

Part Context

This part belongs to the BFP720 series of robust RF transistors. It is distinguished by its integrated ESD protection and high RF input power tolerance compared to standard variants. The H6327 suffix indicates the specific tape and reel packaging configuration used for automated assembly processes.

Replacement Considerations

Direct substitutes within the same family may offer similar pinouts but lack identical ESD protection levels. Verify that any alternative component meets the 43 GHz transition frequency and 21 dBm RF input power requirements to maintain system performance integrity.