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The BFP720FESDH6327XTSA1 is a silicon-germanium (SiGe) RF bipolar transistor manufactured by Infineon Technologies. It operates at frequencies up to 43 GHz and features a TSFP-4-1 surface-mount package. Key electrical parameters include a collector-emitter breakdown voltage of 4.2 V, a continuous collector current of 30 mA, and a power dissipation rating of 100 mW. The device supports an operating temperature range from -55 °C to +150 °C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific suffix matches the required package and tape-and-reel specifications. Check for recent discontinuation notices as availability may be limited. Ensure storage conditions meet moisture sensitivity level requirements before soldering.
Select this component when a SiGe bipolar transistor is required for operations near 43 GHz. Consider the 4.2 V collector-emitter voltage limit and 30 mA current capability during circuit design. Evaluate thermal management needs given the 100 mW power dissipation in the TSFP-4-1 package. Compare against alternative RF transistors if higher voltage ratings are necessary.
This part belongs to the BFP720 series of RF bipolar transistors. It is distinct from other Infineon RF devices by its specific SiGe composition and 43 GHz frequency target. The H6327 suffix indicates the specific packaging and reel configuration used for automated assembly processes.
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official replacement guides or contact the manufacturer directly for qualified alternatives due to potential discontinuation status.