BFP720FESDH6327XTSA1

BFP720FESDH6327XTSA1

$0.38
  • Description:RF TRANS NPN 4.7V 45GHZ 4-TSFP
  • Series:-

SKU:95b5edaf61a1 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 4.7V 45GHZ 4-TSFP
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):4.7V
  • Frequency - Transition:45GHz
  • Noise Figure (dB Typ @ f):0.5dB ~ 1.3dB @ 150MHz ~ 10GHz
  • Gain:10dB ~ 29dB
  • Power - Max:100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 15mA, 3V
  • Current - Collector (Ic) (Max):30mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, Flat Leads
  • Supplier Device Package:4-TSFP
  • Grade:-
  • Qualification:-

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BFP720FESDH6327XTSA1

Overview

The BFP720FESDH6327XTSA1 is a silicon-germanium (SiGe) RF bipolar transistor manufactured by Infineon Technologies. It operates at frequencies up to 43 GHz and features a TSFP-4-1 surface-mount package. Key electrical parameters include a collector-emitter breakdown voltage of 4.2 V, a continuous collector current of 30 mA, and a power dissipation rating of 100 mW. The device supports an operating temperature range from -55 °C to +150 °C.

Feature Summary

  • Utilizes SiGe technology for high-frequency performance
  • Designed for RF applications with operation up to 43 GHz
  • Compact TSFP-4-1 surface-mount packaging

Applications

  • RF signal processing circuits
  • High-frequency amplifier stages
  • Wireless communication infrastructure components

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific suffix matches the required package and tape-and-reel specifications. Check for recent discontinuation notices as availability may be limited. Ensure storage conditions meet moisture sensitivity level requirements before soldering.

Selection Notes

Select this component when a SiGe bipolar transistor is required for operations near 43 GHz. Consider the 4.2 V collector-emitter voltage limit and 30 mA current capability during circuit design. Evaluate thermal management needs given the 100 mW power dissipation in the TSFP-4-1 package. Compare against alternative RF transistors if higher voltage ratings are necessary.

Part Context

This part belongs to the BFP720 series of RF bipolar transistors. It is distinct from other Infineon RF devices by its specific SiGe composition and 43 GHz frequency target. The H6327 suffix indicates the specific packaging and reel configuration used for automated assembly processes.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official replacement guides or contact the manufacturer directly for qualified alternatives due to potential discontinuation status.

BFP720FESDH6327XTSA1BFP720FESDH6327XTSA1
$0.38
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