BFP740E6327

BFP740E6327

$0.28
  • Description:RF TRANS NPN 4.7V 42GHZ PGSOT343
  • Series:-

SKU:b4f52a704563 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 4.7V 42GHZ PGSOT343
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):4.7V
  • Frequency - Transition:42GHz
  • Noise Figure (dB Typ @ f):0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
  • Gain:27dB
  • Power - Max:160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 25mA, 3V
  • Current - Collector (Ic) (Max):30mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-82A, SOT-343
  • Supplier Device Package:PG-SOT343-4
  • Grade:-
  • Qualification:-

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BFP740E6327

Overview

The BFP740E6327 is a silicon-germanium (SiGe) NPN RF bipolar junction transistor manufactured by Infineon Technologies. It operates at a transition frequency of 42 GHz with a maximum collector-emitter voltage of 4 V and a continuous collector current of 30 mA. The device is housed in an SOT-343 surface-mount package, suitable for high-frequency applications. It supports a wide operating temperature range from -65 °C to +150 °C and has a total power dissipation rating of 160 mW.

Feature Summary

  • Utilizes SiGe technology for enhanced high-frequency performance
  • Designed for single-configuration surface-mount integration
  • Capable of operation across extended industrial temperature ranges

Applications

  • RF signal processing circuits
  • High-frequency amplifier stages
  • Wireless communication front-end modules

Procurement Notes

This component is officially listed as End-of-Life and discontinued by the manufacturer. Availability is restricted to remaining stock or obsolete channels. Buyers must verify authenticity through authorized distributors and confirm that the part meets all original specifications before procurement, as replacement sourcing may require design adjustments.

Selection Notes

Engineers should evaluate the BFP740H series or other compatible SiGe transistors as potential replacements due to the discontinuation status. Selection criteria must account for the specific 42 GHz transition frequency and 160 mW power dissipation limits. Verify that alternative components match the required SOT-343 footprint and thermal characteristics to ensure seamless integration into existing designs.

Part Context

The BFP740E6327 belongs to the BFP740 product family of RF bipolar transistors. This series is characterized by its use of silicon-germanium heterojunction bipolar transistor (HBT) technology, optimized for low-noise and high-gain applications in microwave frequencies. The E6327 suffix denotes a specific tape-and-reel packaging configuration used for automated assembly processes.

BFP740E6327BFP740E6327
$0.28
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