BFP740E6327HTSA1

Overview

The BFP740E6327HTSA1 is an RF bipolar transistor manufactured by Infineon Technologies, belonging to the BFP740 series. It utilizes Silicon (Si) technology and is housed in a surface-mount SOT-343-4 package. The device is qualified under the AEC-Q100 standard for automotive applications. Key electrical parameters include a transition frequency (fT) of 44 GHz, a maximum DC collector current (IC max) of 45 mA, and a minimum noise figure (NF min) of 0.45 dB at 900 MHz. Additional specifications feature a maximum power dissipation (Ptot) of 160 mW, a maximum collector-emitter voltage (VCEO max) of 4 V, a maximum gain (Gmax) of 27 dB at 900 MHz, an output IP3 (OIP3) of 25 dBm, and an output P1dB (OP1dB) of 11 dBm.

Feature Summary

• High-frequency operation capability with a transition frequency up to 44 GHz.
• Low-noise performance optimized for sensitive signal reception at 900 MHz.
• Automotive-grade qualification ensuring reliability in demanding environments.

Applications

• Front-end circuits for WLAN systems operating in the 6 to 7 GHz range.
• Low-noise amplification stages in Global Navigation Satellite System (GNSS) receivers.
• General RF signal processing within wireless communication infrastructure.

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific suffix matches the required automotive qualification standards. Check for end-of-life status notifications as discontinuation may affect long-term supply availability. Ensure storage conditions comply with moisture sensitivity levels defined in the datasheet prior to assembly.

Selection Notes

Select this component when designing circuits requiring high linearity and low noise figures at microwave frequencies. Compare the 4 V collector-emitter voltage limit against system supply rails to prevent breakdown. Evaluate the 160 mW power dissipation rating against thermal management capabilities in the target PCB layout. Consider the SOT-343-4 footprint constraints during mechanical design integration.

Part Context

This part belongs to the BFP740 family of silicon RF transistors designed for high-frequency analog and RF applications. It shares the core die characteristics with other variants in the series but differs in packaging and tape-and-reel configuration codes. The E6327HTSA1 suffix denotes specific manufacturing and packaging details consistent with Infineon's standard product coding structure.

Replacement Considerations

Direct substitutes are not explicitly listed in available public documentation. Engineers should evaluate other members of the BFP740 series or comparable SiGe/RF bipolar transistors from Infineon offering similar fT and NF specifications. Verify pinout compatibility and thermal resistance values before implementing any alternative components.