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Product Detailed Parameters
- Description：RF TRANS NPN 4.7V 47GHZ 4-TSFP
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：4.7V
- Frequency - Transition：47GHz
- Noise Figure (dB Typ @ f)：0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
- Gain：9dB ~ 31dB
- Power - Max：160mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 25mA, 3V
- Current - Collector (Ic) (Max)：45mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：4-SMD, Flat Leads
- Supplier Device Package：4-TSFP
- Grade：-
- Qualification：-
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Overview
The BFP740FESDH6327XTSA1 is an NPN silicon-germanium (SiGe) RF bipolar junction transistor designed for automotive applications. It features a maximum collector-emitter voltage of 4.2 V and a maximum DC collector current of 45 mA. The device operates with a minimum DC current gain of 160 at 25 mA and 3 V. Key electrical parameters include a typical input capacitance of 0.5 pF, a maximum collector-base voltage of 4.9 V, and a power dissipation of 160 mW. It is housed in a TSFP-4 package and holds AEC-Q100 qualification.
Feature Summary
- Automotive-grade reliability certified under AEC-Q100 standards
- Silicon-germanium technology optimized for low noise performance
- High DC current gain suitable for sensitive signal amplification
Applications
- Low-noise amplifier stages in automotive communication systems
- RF front-end components in vehicle infotainment modules
- Signal processing circuits in automotive radar sensors
Procurement Notes
Verify the specific suffix H6327XTSA1 to ensure correct packaging and tape-and-reel configuration. Confirm AEC-Q100 compliance requirements match the target automotive application. Check for end-of-life status or obsolescence notices from Infineon before finalizing design-in decisions. Ensure storage conditions align with moisture sensitivity levels defined in the datasheet.
Selection Notes
Select this component when low noise figure and high linearity are critical in automotive RF environments. Compare input capacitance and current gain against alternative SiGe transistors for impedance matching. Consider the TSFP-4 package dimensions for PCB layout constraints. Validate thermal management capabilities given the 160 mW power dissipation limit in enclosed automotive housings.
Part Context
This part belongs to the BFP740 series of RF bipolar transistors manufactured by Infineon Technologies. The series utilizes SiGe heterojunction bipolar transistor (HBT) technology. The BFP740FESD variant specifically targets automotive electronics requiring robust performance under varying temperature conditions. It serves as a specialized solution for high-frequency signal handling in modern vehicles.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs if considering alternatives from other manufacturers.
