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The BFP740H6327XTSA1 is a SiGe:C NPN RF heterojunction bipolar transistor (HBT) manufactured by Infineon Technologies. It operates in the SOT-343 package with four pins configured as Base, Emitter, Collector, and Emitter. The device supports a maximum collector-emitter voltage of 4.0 V and a total power dissipation of 160 mW at a soldering point temperature of 100 °C. Key electrical characteristics include a transition frequency of 44 GHz at 25 mA, a minimum noise figure of 0.85 dB at 5.5 GHz, and a maximum power gain of 19.5 dB under standard test conditions.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific ordering code matches the required package and marking. Ensure handling procedures account for electrostatic discharge sensitivity. Review the datasheet for absolute maximum ratings to prevent operational damage during integration.
Select this component for designs requiring high-frequency operation up to 10 GHz with low noise characteristics. Evaluate the bias current requirements against the specified DC current gain and transition frequency curves. Consider the thermal resistance and power dissipation limits when designing the PCB layout for adequate heat management.
This part belongs to the BFP740 series of SiGe:C NPN RF bipolar transistors. It is specifically designated by the H6327 suffix indicating the SOT-343 package and reel packaging configuration. The series is validated for industrial applications according to JEDEC standards.
Direct substitutes within the same family include variants with different packaging or marking codes, such as BFP740FE6327XTSA1. Verify pin compatibility and electrical specifications before substitution.