BFP840FESDH6327XTSA1

Overview

The BFP840FESDH6327XTSA1 is a SiGe:C NPN RF heterojunction bipolar transistor (HBT) with integrated ESD protection, designed for 5 GHz band applications. It features a transition frequency (fT) of 85 GHz and supports low voltage operation at VCC = 1.2 V and 1.8 V. Key electrical parameters include a collector-emitter breakdown voltage (V(BR)CEO) of 2.25 V, maximum collector current (IC) of 35 mA, and total power dissipation (Ptot) of 75 mW. At 5.5 GHz with IC = 5 mA and VCE = 1.8 V, the minimum noise figure (NFmin) is 0.75 dB. The device offers a maximum power gain (Gms) of 23 dB at 5.5 GHz with IC = 10 mA and an output third-order intercept point (OIP3) of 22 dBm under the same conditions.

Feature Summary

• Combines high end RF performance with robustness, supporting up to 20 dBm maximum RF input power and 1.5 kV HBM ESD hardness.
• Enables best in class noise performance at high frequencies due to a high transition frequency of 85 GHz.
• Suitable for low voltage applications including 1.2 V and 1.8 V supply rails.

Applications

• WLAN, WiMAX and UWB
• Satellite communication systems: satellite radio (SDARs, DAB)
• Navigation systems (e.g. GPS, GLONASS, BeiDou, Galileo)

Procurement Notes

Verify component authenticity by checking the marking code T8s on the TSFP-4-1 package against official Infineon documentation. Confirm the ordering suffix H6327XTSA1 matches the reel quantity of 3000 pieces. Ensure handling precautions are observed as the device is ESD sensitive. Validate that the industrial qualification meets JEDEC standards for the intended application environment.

Selection Notes

Select this component when designing circuits for 5 GHz bands requiring low noise figures and high linearity. The integrated ESD protection simplifies system design by reducing external protection requirements. Consider the low voltage compatibility for battery-powered devices. Verify thermal management capabilities given the 75 mW power dissipation limit in the small TSFP-4-1 package.

Part Context

This part belongs to the BFP840FESD series of SiGe:C NPN RF bipolar transistors manufactured by Infineon Technologies. It is specifically engineered for robust RF performance in compact surface-mount packages. The TSFP-4-1 package provides a small footprint suitable for dense PCB layouts in modern wireless communication equipment.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided datasheet or source material. Consult Infineon technical support for qualified alternatives if this component becomes unavailable.

FAQ

What is the maximum RF input power supported by the BFP840FESDH6327XTSA1?

The device supports a maximum RF input power of 20 dBm.

What is the ESD hardness rating of this transistor?

The transistor has an ESD hardness of 1.5 kV HBM (Human Body Model) across all pins.

At what frequency and bias conditions is the minimum noise figure of 0.75 dB achieved?

The minimum noise figure of 0.75 dB is achieved at 5.5 GHz with a collector current of 5 mA and a collector-emitter voltage of 1.8 V.