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The BFQ18A,115 is an NPN silicon RF bipolar transistor manufactured by NXP Semiconductors. It operates at a maximum frequency of 4 GHz with a collector-emitter voltage (VCEO) of 18 V and a continuous collector current of 150 mA. The device features a single configuration housed in an SOT-89 surface-mount package. Power dissipation is rated at 1 W, and it functions within a temperature range of -65 °C to +150 °C. The emitter-base voltage (VEBO) is specified at 2 V. This component is designed for high-frequency applications and is supplied in tape-and-reel packaging.
Verify the obsolete status of this component before design inclusion. Confirm availability through authorized channels as standard distribution may be limited. Ensure that any replacement strategy accounts for the discontinuation notice provided by the manufacturer. Validate that the selected substitute meets all original electrical specifications and package constraints.
This component is designated as not recommended for new designs. Engineers should evaluate alternative devices from the same product family or newer generations. Consider the BFU580Q or BFU590Q as potential replacements. Verify that any substituted part maintains compatibility with existing MATV circuit topologies and thermal management requirements.
The BFQ18A belongs to NXP's portfolio of RF small signal bipolar transistors. It is historically associated with Philips Semiconductors branding prior to the NXP transition. The part is categorized under RF Bipolar Transistors and is distinct from general-purpose switching transistors due to its specific high-frequency performance characteristics and intended use in broadcast infrastructure.
Public documentation identifies BFU580Q and BFU590Q as recommended replacements for this discontinued part.