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The BFQ19,115 is an NPN silicon RF bipolar transistor designed for wideband applications up to 5 GHz. It features a maximum collector-emitter voltage (VCEO) of 18 V and a continuous collector current of 150 mA. The device operates within a temperature range of -65 °C to +150 °C and dissipates up to 1 W of power. Packaged in a SOT-89 surface-mount enclosure with a tape reel shipping format, it serves as a high-frequency component for UHF and microwave circuit integration.
This component is discontinued and no longer manufactured by NXP Semiconductors. Historical data sheets and design resources remain available for reference purposes only. Verification of legacy stock availability requires direct inquiry with authorized distributors or surplus suppliers. Designers should initiate replacement qualification immediately to ensure long-term supply chain stability.
Select this part for historical designs requiring an NPN wideband transistor rated at 5 GHz with 18 V breakdown. Verify that the SOT-89 package footprint matches the existing PCB layout. Confirm that the 150 mA current limit and 1 W power dissipation meet the specific amplifier biasing requirements. Check if modern equivalents offer improved noise figures or gain characteristics for updated specifications.
The BFQ19 belongs to the BFQ series of NPN wideband transistors intended for UHF and microwave applications. It shares the SOT-89 packaging style with variants like the BFQ18A but offers higher frequency capability up to 5 GHz. This family targets analog signal processing in test equipment and communication infrastructure where broad bandwidth is critical.
Publicly confirmed substitute part numbers are not provided in the available documentation. Engineers must identify cross-reference components based on matching electrical parameters such as 5 GHz cutoff frequency, 18 V VCEO, and SOT-89 package compatibility.