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The BFQ31ATC is an NPN RF bipolar junction transistor manufactured by Diodes Incorporated, designed for high-frequency signal amplification. It features a collector-emitter breakdown voltage of 15V and supports a maximum DC collector current of 100mA. The device operates with a transition frequency of 600MHz and handles a maximum power dissipation of 330mW. Packaged in a surface-mount SOT-23-3 configuration, it provides stability for RF applications.
This component is officially listed as obsolete and no longer manufactured by Diodes Incorporated. Procurement should focus on verifying the authenticity of remaining stock from authorized distributors or secondary markets. Ensure that any available units are genuine original components, as availability is limited and supply chain traceability may vary significantly for end-of-life parts.
Engineers selecting this part must account for its discontinued status. Design-in decisions should prioritize verified substitutes or alternative active devices with compatible electrical parameters. Due to the obsolescence, long-term production viability is compromised, requiring careful assessment of lifecycle risks and potential redesign requirements for sustained manufacturing.
The BFQ31ATC belongs to the Bipolar RF Transistors product line from Diodes Incorporated. It is categorized under general-purpose RF transistors utilizing NPN technology. The component is distinct within the manufacturer's portfolio as a legacy surface-mount device intended for specific frequency bands, now superseded by newer generations of RF solutions.
Official substitute part numbers are not explicitly confirmed in the provided documentation. Users should consult distributor databases for cross-reference suggestions or contact Diodes Incorporated directly for approved replacement recommendations.