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Product Detailed Parameters
- Description：RF TRANS NPN 10V 8GHZ SC-70
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：10V
- Frequency - Transition：8GHz
- Noise Figure (dB Typ @ f)：1.3dB ~ 3dB @ 1GHz ~ 2GHz
- Gain：-
- Power - Max：300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 15mA, 5V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70
- Grade：-
- Qualification：-
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Overview
The BFQ67W,135 is an NPN silicon wideband transistor manufactured by NXP Semiconductors. It is housed in a plastic SOT323 surface-mount envelope. The device is engineered for high-frequency operations with a transition frequency of 8 GHz. Key electrical specifications include a maximum collector-emitter breakdown voltage of 10 V and a maximum collector current of 50 mA. The component supports a power dissipation rating of 300 mW. This part is designated as obsolete and no longer manufactured.
Feature Summary
- Designed for wideband applications requiring high-frequency performance
- Utilizes a compact plastic SOT323 surface-mount package
- Optimized for RF portable communications systems
Applications
- Satellite TV tuners
- RF portable communications equipment
- Wideband signal processing circuits
Procurement Notes
This component is officially classified as No Longer Manufactured (NLM) by NXP Semiconductors. Procurement must rely on verified third-party distributors or surplus stock providers. Buyers should confirm the authenticity of available units and verify that the specific ordering suffix matches the required specification. Obsolete status implies limited availability and potential supply chain volatility.
Selection Notes
Selection requires evaluating the need for an 8 GHz NPN transistor in a SOT323 package. Designers must ensure the 10 V breakdown voltage and 300 mW power dissipation meet circuit requirements. Due to the obsolete status, alternative components with similar RF characteristics and compatible pinouts should be identified for new designs.
Part Context
The BFQ67W series belongs to NXP's portfolio of silicon NPN transistors intended for mobile and RF devices. The BFQ67W,135 specifically denotes the tape-and-reel packaging variant within this family. These components are characterized by their capability to handle wideband signals efficiently in compact form factors suitable for modern electronic devices.
Replacement Considerations
Official substitutes are not explicitly listed in public documentation. Users should seek similar NPN RF transistors with comparable transition frequencies and package types from authorized distributors.
