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The BFR 181 E6780 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It features an NPN configuration in a SOT-23 package. Key electrical parameters include a collector-emitter breakdown voltage of 12 V, a maximum collector current of 20 mA, and a total power dissipation of 175 mW. The transition frequency (fT) reaches 8 GHz at 10 mA collector current. Minimum noise figures are specified as 0.9 dB at 900 MHz and 1.2 dB at 1.8 GHz. DC current gain is typically 100 at 5 mA and 8 V.
Verify component authenticity through authorized distributors or the manufacturer directly. Confirm the specific ordering suffix matches the required reel quantity and packaging format. Ensure handling precautions are followed due to electrostatic discharge sensitivity. Check for AEC-Q101 qualification status if automotive compliance is required for the specific application environment.
Select this component when designing circuits requiring low noise performance at frequencies up to 8 GHz. Evaluate the operating point against the specified collector current range of 0.5 mA to 12 mA to optimize noise figure and gain. Consider the thermal resistance characteristics for heat dissipation in surface mount layouts. Verify impedance matching requirements for source and load connections at target frequencies.
This part belongs to the BFR 181 series of low noise silicon bipolar RF transistors. The E6780 suffix indicates specific packaging and reel configuration details provided by the manufacturer. It is distinct from other variants in the family based on these logistical attributes while maintaining identical electrical specifications.
No public confirmed substitute part numbers are available in the documentation.