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The BFR 182T is an NPN silicon RF transistor designed for low noise and high-gain broadband amplification at collector currents ranging from 1 mA to 20 mA. It features a transition frequency (fT) of 8 GHz and a minimum noise figure of 1.2 dB at 900 MHz. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 12 V, a continuous collector current (IC) of 35 mA, and a total power dissipation (Ptot) of 250 mW at 75°C case temperature. The device operates within a junction temperature range up to 150°C and utilizes the SC75 package.
Verify component authenticity by cross-referencing the marking code RGs with official Infineon documentation. Confirm the SC75 package type matches design requirements. Ensure handling precautions are observed due to electrostatic discharge sensitivity. Validate that the specific ordering suffix aligns with the required tape and reel specifications for automated assembly processes.
Select this component when designing circuits requiring an fT of 8 GHz with a noise figure below 1.2 dB at 900 MHz. Consider the 250 mW power dissipation limit and the need for adequate thermal management via the soldering point. Evaluate the 12 V collector-emitter voltage rating against the circuit's supply rails to ensure safe operating margins under all load conditions.
This component belongs to the BFR series of NPN silicon RF transistors manufactured by Infineon Technologies. It shares functional similarities with other devices in the family but is distinguished by its specific SC75 packaging and optimized parameters for low-noise, high-gain applications in the UHF spectrum.
Consult official Infineon substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical characteristics such as fT, noise figure, and maximum voltage ratings against the original datasheet specifications.