BFR 183W E6327

Overview

The BFR 183W is a low noise silicon bipolar RF transistor designed for broadband amplifiers operating at collector currents between 2 mA and 30 mA. It features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. The device supports a maximum collector-emitter voltage (VCEO) of 12 V, a collector current (IC) of 65 mA, and total power dissipation (Ptot) of 450 mW. It utilizes an SOT-323 package with pin configuration 1=Base, 2=Emitter, 3=Collector.

Feature Summary

• Optimized for low noise and high-gain applications in broadband amplifier circuits
• Provides stable performance across a wide range of collector currents from 2 mA to 30 mA
• Constructed with a lead-free, RoHS compliant, and halogen-free package

Applications

• Low noise broadband amplifiers
• RF signal processing stages requiring minimal noise insertion
• High-gain amplifier designs operating within specified DC bias conditions

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific ordering suffix matches the required packaging format. Ensure handling procedures account for electrostatic discharge sensitivity during storage and assembly processes.

Selection Notes

Select this component when designing circuits requiring low noise figures near 900 MHz and 1.8 GHz frequencies. Evaluate thermal management requirements based on the 450 mW power dissipation limit and junction-to-soldering point thermal resistance. Ensure the application operates within the 12 V collector-emitter voltage rating.

Part Context

This part belongs to the BFR series of low noise silicon bipolar RF transistors manufactured by Infineon Technologies. It shares design characteristics with other devices in the family, such as the BFR182W, but offers specific electrical parameters tailored for distinct amplifier gain and noise requirements.

Replacement Considerations

BFR182W E6327