BFR 340T E6327

Overview

The BFR 340T is an NPN silicon RF transistor designed for low voltage and low current applications. It features a transition frequency of 14 GHz and high insertion gain, making it suitable for low current amplifiers and oscillators. Key electrical parameters include a collector-emitter breakdown voltage (V(BR)CEO) of 6 V at IC = 1 mA, a DC current gain (hFE) ranging from 60 to 200 at IC = 5 mA, and a maximum power dissipation of 60 mW. The device operates within a junction temperature range of -65 °C to 150 °C and utilizes the SC75 package.

Feature Summary

• Transition frequency of 14 GHz
• High insertion gain
• Low voltage operation

Applications

• Low current amplifiers
• Oscillators

Procurement Notes

Verify component authenticity by checking markings against official Infineon documentation. Confirm package type matches the specified SC75 configuration. Ensure handling precautions are followed due to electrostatic discharge sensitivity. Review datasheet revisions for any updates to electrical characteristics or thermal resistance values before integration.

Selection Notes

Select this component for designs requiring low voltage operation with high-frequency performance up to 14 GHz. Consider the 60 mW power dissipation limit when designing thermal management solutions. Verify that the required DC current gain falls within the 60 to 200 range specified for IC = 5 mA. Ensure the operating environment stays within the -65 °C to 150 °C temperature limits.

Part Context

This part belongs to the BFR series of NPN silicon RF transistors manufactured by Infineon Technologies. It is specifically engineered for radio frequency applications where low current consumption and high gain are critical. The SC75 package provides a compact form factor suitable for surface-mount assembly in space-constrained electronic devices.

Replacement Considerations

No direct replacement part numbers are documented in the provided source material.