BFR 360L3 E6327

Overview

The BFR 360L3 E6327 is a low noise silicon bipolar RF transistor designed for low voltage and low current operation. It features a collector-emitter breakdown voltage of 6 V, a maximum collector current of 35 mA, and a total power dissipation of 210 mW at 25 °C. The device operates up to a junction temperature of 150 °C and utilizes a TSLP-3-1 package. Key electrical characteristics include a minimum noise figure of 1.0 dB at 1.8 GHz and 1.3 dB at 3 GHz, with a transition frequency of 14 GHz.

Feature Summary

• Optimized for low noise amplifier applications
• Suitable for oscillators operating up to 3.5 GHz with output power exceeding 10 dBm
• Features a Pb-free and halogen-free thin small leadless package

Applications

• Low noise amplifiers
• Oscillators up to 3.5 GHz
• RF signal processing circuits requiring low noise performance

Procurement Notes

Verify the component against official Infineon documentation to confirm specifications and compliance status. Ensure handling precautions are observed due to electrostatic discharge sensitivity. Check for AEC-Q101 qualification reports if automotive standards are required. Confirm package type and marking codes match the intended design requirements before procurement.

Selection Notes

Select this component for designs prioritizing low noise figures in the 1.8 GHz to 3.5 GHz range. Consider the 6 V collector-emitter voltage limit and 35 mA maximum current when defining biasing conditions. Evaluate thermal management strategies given the 210 mW power dissipation rating and the specific thermal resistance characteristics of the TSLP-3-1 package.

Part Context

This part belongs to the BFR360 series of low noise silicon bipolar RF transistors manufactured by Infineon Technologies. It is specifically engineered for applications demanding high linearity and minimal noise addition in radio frequency circuits. The device represents a specialized solution within the broader portfolio of RF discrete semiconductors offered by the manufacturer.

Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers. Cross-referencing should be performed based on matching electrical parameters such as noise figure, transition frequency, and package dimensions to ensure functional compatibility in existing designs.