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The BFR380T is an NPN silicon RF transistor designed for low voltage operation and wide dynamic range applications. It features a maximum collector-emitter voltage of 6 V, a continuous collector current of 80 mA, and total power dissipation of 380 mW at 66°C. The device operates up to 150°C junction temperature with a transition frequency (fT) reaching 14 GHz. Key electrical characteristics include a minimum DC current gain (hFE) of 60 and a typical noise figure of 1.1 dB at 1.8 GHz. It utilizes the SC75 package.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm datasheet revision status as the document is marked preliminary. Ensure handling precautions are observed due to electrostatic discharge sensitivity. Validate package type SC75 compatibility with PCB layout requirements before integration.
Select this component when low voltage operation and high linearity are required. The 14 GHz transition frequency supports broadband RF designs. Consider the 380 mW power dissipation limit for thermal management. Verify impedance matching networks against the provided S-parameter data for optimal gain and stability at target frequencies.
This part belongs to Infineon's portfolio of silicon RF transistors. It shares the NPN configuration and SC75 packaging common to the series. The device targets specific RF niches requiring low noise and high linearity rather than general-purpose switching.
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires independent verification of pinout, electrical limits, and thermal characteristics against alternative components.