BFR 740L3 E6327

Overview

The BFR 740L3 E6327 is an NPN Silicon Germanium RF transistor designed for high-gain, ultra-low noise applications up to 10 GHz. It features a TSLP-3-8 package with gold metallization for reliability. Key electrical parameters include a collector-emitter voltage (VCEO) of 4 V at TA > 0°C and 3.5 V at TA ≤ 0°C, a maximum collector current (IC) of 30 mA, and total power dissipation (Ptot) of 160 mW. The device exhibits a transition frequency (fT) of 42 GHz at IC = 25 mA and VCE = 3 V. Noise figures are specified as 0.5 dB at 1.8 GHz and 0.8 dB at 6 GHz. Maximum stable gain (Gms) reaches 24 dB at 1.8 GHz.

Feature Summary

• Ultra-low noise figure performance suitable for sensitive receiver front ends
• High maximum stable gain across wide bandwidths up to 10 GHz
• Gold metallization construction for enhanced operational reliability

Applications

• CDMA wireless communication systems
• WLAN front-end modules
• Wideband low-noise amplifiers

Procurement Notes

Verify component authenticity through authorized Infineon channels or certified distributors. Confirm the specific ordering suffix matches project requirements. Check datasheet revisions for updated thermal and electrical characteristics before finalizing procurement orders.

Selection Notes

Select this component for designs requiring minimal signal degradation in the 1.8 GHz to 6 GHz range. Ensure biasing circuits maintain VCE within the 4 V limit and IC below 30 mA. Consider the TSLP-3-8 footprint constraints during PCB layout to optimize thermal dissipation and RF performance.

Part Context

This part belongs to the BFR740L3 series of Silicon Germanium HBTs. It is distinct from standard silicon bipolar transistors due to its specialized RF capabilities and low noise profile. The E6327 suffix indicates specific packaging and tape-and-reel configuration details defined by the manufacturer.

Replacement Considerations

Consult official replacement lists for end-of-life status. Verify pinout compatibility and thermal resistance values when substituting with similar SiGe RF transistors.