BFR 949L3 E6327

BFR 949L3 E6327

  • Description:RF TRANS NPN 10V 9GHZ TSLP-3-1
  • Series:-

SKU:d85ae1750794 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 10V 9GHZ TSLP-3-1
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):10V
  • Frequency - Transition:9GHz
  • Noise Figure (dB Typ @ f):1dB ~ 2.5dB @ 1GHz
  • Gain:21.5dB
  • Power - Max:250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 5mA, 6V
  • Current - Collector (Ic) (Max):50mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-101, SOT-883
  • Supplier Device Package:PG-TSLP-3-1
  • Grade:-
  • Qualification:-

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BFR 949L3 E6327

Overview

The BFR 949L3 E6327 is an NPN silicon RF transistor designed for low noise and high-gain broadband amplifiers. It operates with collector currents ranging from 1 mA to 20 mA. Key electrical parameters include a transition frequency (fT) of 9 GHz at 1 GHz, a minimum DC current gain (hFE) of 100, and a maximum collector-emitter voltage (VCEO) of 10 V. The device dissipates up to 250 mW of power and functions within an ambient temperature range of -65 °C to +150 °C. It is housed in a TSLP-3-1 surface-mount package.

Feature Summary

  • Optimized for low noise figure applications in broadband amplifier circuits
  • High transition frequency supporting operation up to 9 GHz
  • Qualified according to AEC Q101 automotive standards

Applications

  • Low noise broadband amplifiers
  • RF signal processing stages requiring high gain
  • Automotive communication systems

Procurement Notes

Verify component authenticity through authorized Infineon channels or certified distributors. Confirm the specific ordering suffix matches the required tape-and-reel quantity of 15,000 pieces per reel. Ensure handling precautions are observed due to electrostatic discharge sensitivity during storage and assembly processes.

Selection Notes

Select this component when designing circuits requiring a transition frequency of 9 GHz and a noise figure below 1.3 dB at 1.8 GHz. Verify that the 10 V collector-emitter voltage rating aligns with the circuit's supply requirements. Consider the TSLP-3-1 package dimensions for PCB layout constraints and thermal management needs.

Part Context

This part belongs to the BFR series of NPN silicon RF transistors manufactured by Infineon Technologies. It utilizes the TSLP-3-1 leadless package technology, which provides a compact footprint suitable for high-density surface mount applications. The series is engineered for performance in radio frequency environments.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official Infineon cross-reference guides for potential alternatives.

BFR 949L3 E6327BFR 949L3 E6327

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