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The BFR 949L3 E6327 is an NPN silicon RF transistor designed for low noise and high-gain broadband amplifiers. It operates with collector currents ranging from 1 mA to 20 mA. Key electrical parameters include a transition frequency (fT) of 9 GHz at 1 GHz, a minimum DC current gain (hFE) of 100, and a maximum collector-emitter voltage (VCEO) of 10 V. The device dissipates up to 250 mW of power and functions within an ambient temperature range of -65 °C to +150 °C. It is housed in a TSLP-3-1 surface-mount package.
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm the specific ordering suffix matches the required tape-and-reel quantity of 15,000 pieces per reel. Ensure handling precautions are observed due to electrostatic discharge sensitivity during storage and assembly processes.
Select this component when designing circuits requiring a transition frequency of 9 GHz and a noise figure below 1.3 dB at 1.8 GHz. Verify that the 10 V collector-emitter voltage rating aligns with the circuit's supply requirements. Consider the TSLP-3-1 package dimensions for PCB layout constraints and thermal management needs.
This part belongs to the BFR series of NPN silicon RF transistors manufactured by Infineon Technologies. It utilizes the TSLP-3-1 leadless package technology, which provides a compact footprint suitable for high-density surface mount applications. The series is engineered for performance in radio frequency environments.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official Infineon cross-reference guides for potential alternatives.