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Product Detailed Parameters
- Description：RF TRANS NPN 10V 9GHZ PG-SC75-3D
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：10V
- Frequency - Transition：9GHz
- Noise Figure (dB Typ @ f)：1dB ~ 2.5dB @ 1GHz
- Gain：20dB
- Power - Max：250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 5mA, 6V
- Current - Collector (Ic) (Max)：35mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：PG-SC75-3D
- Grade：-
- Qualification：-
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Overview
The Infineon BFR 949T is an NPN silicon RF transistor designed for low noise and high-gain broadband amplification. It operates at collector currents between 1 mA and 20 mA, featuring a transition frequency (fT) of 9 GHz. The device exhibits a noise figure of 1.0 dB at 1 GHz and 1.5 dB at 1.8 GHz. Key electrical limits include a collector-emitter voltage (VCEO) of 10 V, a maximum collector current (IC) of 35 mA, and total power dissipation (Ptot) of 250 mW at 75°C case temperature. The component utilizes the SC75 package with pin configuration Base, Emitter, Collector.
Feature Summary
- Optimized for low noise and high-gain applications in broadband amplifier designs
- High transition frequency supporting operation up to 9 GHz
- Low noise figure performance suitable for sensitive receiver front-ends
Applications
- Low noise broadband amplifiers
- RF signal processing circuits
- Wireless communication systems
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm packaging details such as tape and reel specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet or certification documents before finalizing procurement plans.
Selection Notes
Select this component when designing circuits requiring high gain and minimal noise addition at frequencies up to 6 GHz. Ensure the operating collector current remains within the 1 mA to 20 mA range for optimal performance characteristics. Verify thermal management requirements given the 250 mW power dissipation limit.
Part Context
This part belongs to Infineon's portfolio of silicon RF bipolar transistors. These devices are engineered for radio frequency applications where linearity and noise performance are critical. The BFR series typically serves as a building block for amplifiers in mobile and wireless infrastructure.
Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully if considering generic equivalents.
