BFR106,215

Overview

The BFR106,215 is an NPN silicon planar epitaxial transistor housed in a plastic SOT-23 envelope. It is designed for low noise and general RF applications with a transition frequency of 5 GHz. Key electrical parameters include a collector-base voltage (VCBO) of 20 V, a collector-emitter voltage (VCEO) of 15 V, and a maximum DC collector current of 100 mA. The device dissipates up to 500 mW at a soldering point temperature of 70 °C. At 800 MHz, it provides a maximum unilateral power gain of 11.5 dB and a noise figure of 3.5 dB.

Feature Summary

• NPN silicon planar epitaxial construction
• Plastic SOT-23 surface-mounted package
• Optimized for low noise performance
• Broadband operation capability

Applications

• Low noise amplifiers
• General RF applications

Procurement Notes

Verify the component against the official NXP Semiconductors product specification dated September 1995. Confirm that the ordering suffix matches the specific packaging requirements. Ensure compliance with RoHS directives and check for any updates regarding the product status on the manufacturer's website before finalizing procurement.

Selection Notes

Select this component for circuits requiring wideband NPN transistors with high transition frequencies. Evaluate the thermal resistance from junction to soldering point, which is 210 K/W, to ensure adequate heat dissipation within the 500 mW total power dissipation limit. Verify that the operating conditions remain within the specified absolute maximum ratings.

Part Context

This part belongs to the BFR106 series of NPN wideband transistors manufactured by NXP Semiconductors. The '215' suffix typically indicates tape and reel packaging. The device utilizes silicon planar epitaxial technology and is packaged in the standard SOT-23 form factor, suitable for surface mount assembly.

Replacement Considerations

Consult the NXP datasheet for similar parts such as the BFR92AT or BFR93AW. Verify pinout compatibility and electrical specifications before substituting.