BFR181E6327HTSA1

Overview

The BFR181E6327HTSA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It is designed for low noise, high-gain broadband amplifiers operating at collector currents from 0.5 mA to 12 mA. The device features an fT of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. Key electrical parameters include a collector-emitter breakdown voltage (V(BR)CEO) of 12 V, a maximum DC collector current (IC) of 20 mA, and a total power dissipation (Ptot) of 175 mW at a case temperature of 91 °C. It utilizes a Pb-free SOT-23 package with pin configuration 1=B, 2=E, 3=C.

Feature Summary

• Optimized for low noise and high gain in broadband amplifier applications
• High transition frequency (fT) of 8 GHz supporting RF operations
• Low minimum noise figure (NFmin) of 0.9 dB at 900 MHz
• Qualified according to AEC-Q101 standards

Applications

• Low noise broadband amplifiers
• RF front-end modules requiring high gain
• Wireless communication systems

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm the datasheet revision matches the production batch requirements. Ensure proper ESD handling precautions are observed during storage and assembly due to the sensitivity of the semiconductor junctions.

Selection Notes

Select this component when designing circuits requiring minimal signal degradation in the 900 MHz to 1.8 GHz range. Consider the 175 mW power dissipation limit and thermal resistance characteristics for heat management. Verify that the required collector current falls within the optimal 0.5 mA to 12 mA operational window for best noise performance.

Part Context

This part belongs to the BFR181 series of low noise silicon bipolar RF transistors. It shares the same core electrical specifications as other variants in the family but is distinguished by the specific ordering suffix indicating the SOT-23 surface mount packaging and lead-free compliance.

Replacement Considerations

Direct substitutes must match the 12 V collector-emitter voltage, 8 GHz transition frequency, and SOT-23 package. Verify equivalent noise figures and current gains before implementation.