BFR182E6327HTSA1

Overview

The BFR182E6327HTSA1 is an NPN silicon RF bipolar transistor in a SOT-23 package. It features a maximum collector-emitter voltage of 12 V, a maximum DC collector current of 35 mA, and a total power dissipation of 250 mW at 25 °C. The transition frequency (fT) is 8 GHz at 15 mA. Minimum noise figure is 0.9 dB at 900 MHz and 1.3 dB at 1.8 GHz. Maximum available power gain is 18 dB at 900 MHz and 12 dB at 1.8 GHz.

Feature Summary

• Designed for low-noise, high-gain broadband amplifier applications
• Optimized for operation at collector currents between 1 mA and 20 mA
• Qualified according to AEC-Q101 automotive standards

Applications

• Low noise amplifiers
• High-gain broadband amplifiers

Procurement Notes

Verify the component against the official Infineon datasheet specifications before integration. Confirm that the ordering suffix HTSA1 corresponds to the required tape and reel packaging format. Ensure the device meets all electrical limits for the intended operating temperature range.

Selection Notes

Select this component when a low noise figure and high gain are required for UHF band applications. Verify that the 12 V collector-emitter voltage rating and 35 mA current limit align with the circuit design requirements. Consider the thermal resistance characteristics for proper heat dissipation in the final assembly.

Part Context

This part belongs to the BFR182 series of low noise silicon bipolar RF transistors manufactured by Infineon Technologies. It utilizes standard SOT-23 surface mount packaging for compact circuit board integration.

Replacement Considerations

No public confirmed substitute part numbers are documented.