BFR182WH6327XTSA1

Overview

The BFR182WH6327XTSA1 is a low noise silicon bipolar RF transistor designed for broadband amplifiers operating at collector currents between 1 mA and 20 mA. It features an fT of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. The device is housed in a Pb-free, halogen-free SOT-323 package with visible leads. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 12 V, a continuous collector current (IC) of 35 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature of 90 °C. The junction temperature range extends up to 150 °C.

Feature Summary

• Optimized for low noise and high-gain applications in broadband amplifier circuits
• High transition frequency (fT) of 8 GHz supporting RF signal processing
• Low minimum noise figure (NFmin) of 0.9 dB at 900 MHz
• RoHS compliant and halogen-free packaging

Applications

• Low noise broadband amplifiers
• RF front-end modules
• Communication systems requiring high gain and low noise performance

Procurement Notes

Verify the component authenticity by checking the marking code RGs against the official datasheet specifications. Confirm the package type is SOT-323 and ensure the ordering suffix matches WH6327XTSA1 for correct reel configuration. Cross-reference the AEC-Q101 qualification status if automotive compliance is required for the specific application environment.

Selection Notes

Select this component when designing circuits that require a silicon NPN RF transistor with a transition frequency of 8 GHz. Ensure the design operates within the specified collector current range of 1 mA to 20 mA to achieve optimal noise and gain characteristics. Verify that the thermal management strategy supports a maximum junction temperature of 150 °C and a total power dissipation limit of 250 mW.

Part Context

This part belongs to Infineon's BFR182 series of low noise silicon bipolar RF transistors. It is specifically engineered for RF applications where low noise figure and high gain are critical. The device utilizes standard silicon technology and is packaged in the compact SOT-323 form factor suitable for surface mount assembly.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official Infineon resources or authorized distributors for qualified alternatives if this component is discontinued or unavailable.

FAQ

What is the minimum noise figure (NFmin) of the BFR182WH6327XTSA1?

The minimum noise figure is 0.9 dB at 900 MHz and 1.3 dB at 1.8 GHz, measured at IC = 3 mA and VCE = 8 V.

What is the maximum collector-emitter voltage (VCEO)?

The maximum collector-emitter voltage is 12 V.

What is the transition frequency (fT) of this transistor?

The transition frequency is 8 GHz, measured at IC = 15 mA, VCE = 8 V, and f = 500 MHz.