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Product Detailed Parameters
- Description：RF TRANS NPN 12V 8GHZ SOT-23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：8GHz
- Noise Figure (dB Typ @ f)：0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
- Gain：17.5dB
- Power - Max：450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 15mA, 8V
- Current - Collector (Ic) (Max)：65mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
- Grade：-
- Qualification：-
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Overview
The BFR183E6327HTSA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It is designed for low noise, high-gain broadband amplifiers operating at collector currents between 2 mA and 30 mA. The device features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. Key electrical ratings include a collector-emitter voltage (VCEO) of 12 V, a maximum collector current (IC) of 65 mA, and a total power dissipation (Ptot) of 450 mW. It utilizes an SOT-23 package with pin configuration Base-Emitter-Collector.
Feature Summary
- Optimized for low noise and high gain in broadband amplifier applications
- High transition frequency supporting operation up to 8 GHz
- Low minimum noise figure suitable for sensitive RF front-end stages
Applications
- Low noise broadband amplifiers
- RF receiver front-ends
- Wireless communication systems
Procurement Notes
Verify component authenticity through official Infineon channels or authorized distributors. Confirm the datasheet revision matches the production batch. Check for AEC-Q101 qualification reports if automotive compliance is required. Ensure proper ESD handling precautions are observed during storage and assembly due to device sensitivity.
Selection Notes
Select this component when designing circuits requiring minimal signal degradation in the 900 MHz to 1.8 GHz range. Evaluate thermal management requirements as power dissipation decreases significantly above a case temperature of 60 °C. Ensure biasing conditions align with the specified collector current range of 2 mA to 30 mA for optimal noise performance.
Part Context
This part belongs to the BFR183 series of low noise silicon bipolar RF transistors from Infineon Technologies. The 'E6327' suffix typically denotes specific tape and reel packaging configurations used for automated surface-mount assembly. The 'HTSA1' suffix indicates Pb-free (RoHS compliant) manufacturing standards.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult Infineon's official replacement guides or contact technical support directly for validated cross-references.
