BFR183WH6327XTSA1

Overview

The BFR183WH6327XTSA1 is a low noise silicon bipolar RF transistor designed for broadband amplifiers operating at collector currents between 2 mA and 30 mA. It features an fT of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. The device utilizes a SOT-323 package with a maximum collector-emitter voltage (VCEO) of 12 V and a total power dissipation of 450 mW. DC current gain (hFE) ranges from 70 to 140, while the transition frequency reaches 8 GHz under specific bias conditions.

Feature Summary

• Optimized for low noise and high-gain applications in broadband amplifier circuits
• Utilizes a compact SOT323 surface mount package suitable for space-constrained designs
• Compliant with RoHS standards and halogen-free manufacturing requirements

Applications

• Low noise broadband amplifiers
• RF signal processing stages requiring minimal noise contribution
• Communication systems operating within the specified frequency range

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number and ordering code against official Infineon documentation. Confirm that the received units match the specified SOT-323 package and marking code RHs. Ensure handling precautions are observed due to electrostatic discharge sensitivity during storage and installation processes.

Selection Notes

Select this component when designing circuits requiring low noise figures around 900 MHz to 1.8 GHz with moderate power handling capabilities. Consider the 12 V collector-emitter voltage limit and 450 mW thermal dissipation constraints. Evaluate the 8 GHz transition frequency against system bandwidth requirements to ensure adequate performance margins for the intended application frequency.

Part Context

This component belongs to the BFR183 series of low noise silicon bipolar RF transistors manufactured by Infineon Technologies. It is specifically engineered for RF applications where signal integrity and low noise performance are critical. The device represents a standard solution for general-purpose RF amplification tasks within the defined electrical parameters.

Replacement Considerations

Direct substitutes must match the NPN polarity, SOT-323 package, and similar RF performance metrics. Verify compatibility regarding maximum voltage ratings and thermal resistance values before implementation.

FAQ

What is the minimum noise figure specification?

The minimum noise figure is 0.9 dB at 900 MHz and 1.4 dB at 1.8 GHz, measured at IC = 5 mA and VCE = 8 V.

What is the maximum collector current rating?

The maximum continuous collector current (IC) is rated at 65 mA.

Is the device qualified for automotive applications?

Yes, a qualification report according to AEC-Q101 is available for this component.