BFR193FH6327

Overview

The BFR193FH6327 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It is designed for low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers. The device features an fT of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. Key electrical parameters include a collector-emitter voltage (VCEO) of 12 V, a maximum collector current (IC) of 80 mA, and a total power dissipation (Ptot) of 580 mW. The DC current gain (hFE) ranges from 70 to 140 at IC = 30 mA and VCE = 8 V. The component is housed in a TSFP-3 package.

Feature Summary

• Optimized for low noise and high-gain amplifier applications operating up to 2 GHz
• Suitable for linear broadband amplifier designs
• Features a transition frequency (fT) of 8 GHz and a minimum noise figure of 1 dB at 900 MHz

Applications

• Low noise, high-gain amplifiers up to 2 GHz
• Linear broadband amplifiers

Procurement Notes

Verify the exact ordering suffix against official documentation to ensure correct packaging and qualification status. Confirm RoHS compliance and halogen-free status as specified in the datasheet. Check for AEC-Q101 qualification reports if automotive or high-reliability standards are required. Ensure proper ESD handling precautions are observed during procurement and storage.

Selection Notes

Select this component for designs requiring low noise figures and high gain in the sub-2 GHz range. Consider the 12 V collector-emitter voltage and 80 mA maximum collector current limits when designing bias circuits. Evaluate the thermal resistance of 135 K/W for heat dissipation requirements in the TSFP-3 package.

Part Context

This part belongs to the BFR193 series of low noise silicon bipolar RF transistors produced by Infineon Technologies. The 'H6327' suffix typically denotes specific tape-and-reel packaging configurations used for surface-mount assembly. The base device is characterized for RF performance up to 2 GHz with optimized noise and gain parameters.

Replacement Considerations

Consult official replacement lists or cross-reference guides provided by Infineon Technologies. Verify that any substitute component matches the TSFP-3 package, pin configuration, and critical RF parameters such as fT and NFmin.