BFR193WH6327XTSA1

Overview

The BFR193WH6327XTSA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It features an NPN configuration housed in a surface-mount SOT-323 package. The device provides a transition frequency (fT) of 8 GHz and a minimum noise figure of 1 dB at 900 MHz. Maximum ratings include a collector-emitter voltage of 12 V, a collector current of 80 mA, and total power dissipation of 580 mW. DC current gain is specified with a minimum value of 70 at 30 mA and 8 V.

Feature Summary

• Designed for low noise and high-gain amplifier applications up to 2 GHz
• Suitable for linear broadband amplification tasks
• Qualified according to AEC-Q101 automotive standards

Applications

• Low noise amplifiers operating up to 2 GHz
• Linear broadband amplifiers
• Automotive electronic systems requiring AEC-Q101 qualification

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and reel specifications. Confirm RoHS compliance status and check for any active product lifecycle notices or obsolescence warnings before finalizing procurement plans.

Selection Notes

Select this component when designing circuits requiring low noise figures around 900 MHz to 1.8 GHz. Ensure the design accommodates the 12 V maximum collector-emitter voltage and 80 mA collector current limits while maintaining thermal management within the 150 °C junction temperature specification.

Part Context

This part belongs to the BFR193 series of low noise silicon bipolar RF transistors from Infineon Technologies. The 'W' designation indicates the SOT-323 surface-mount package variant, while the suffix 'H6327XTSA1' specifies the tape and reel packaging format used for automated assembly processes.

Replacement Considerations

Consult official replacement lists for verified substitutes. Cross-reference electrical parameters such as fT, NFmin, and package dimensions to ensure compatibility.