BFR31,235

Overview

The BFR31,235 is a planar epitaxial symmetrical junction N-channel field-effect transistor manufactured by NXP Semiconductors. It is housed in a plastic SOT23 surface-mounted package with three terminals and interchangeable drain and source pins. The device is designed for low-level general-purpose amplification in thick and thin-film circuits. Key electrical parameters include a maximum drain-source voltage of ±25 V and a total power dissipation of 250 mW at temperatures up to 40 °C. The typical drain current (IDSS) ranges from 1 mA to 5 mA at VGS = 0 V and VDS = 10 V. Common-source transfer admittance (|yfs|) typically falls between 1.5 mS and 4.5 mS at ID = 1 mA, VDS = 10 V, and f = 1 kHz.

Feature Summary

• Symmetrical junction structure allowing interchangeable drain and source connections.

Applications

• Low level general purpose amplifiers in thick film circuits
• Low level general purpose amplifiers in thin film circuits

Procurement Notes

Verify the component authenticity by checking the marking code M2p on the device body against the official datasheet specifications. Ensure that the ordering suffix matches the required tape reel configuration for standard product orientation. Confirm the package type corresponds to the SOT23 outline dimensions provided in the manufacturer's documentation before finalizing procurement orders.

Selection Notes

Select this component when designing low-level general-purpose amplifiers requiring an N-channel junction FET. Consider the specific IDSS range of 1 mA to 5 mA and the transfer admittance characteristics for signal processing requirements. Evaluate thermal management needs as the total power dissipation is limited to 250 mW at ambient temperatures up to 40 °C, requiring derating at higher temperatures.

Part Context

The BFR31 belongs to the BFR30/BFR31 family of N-channel field-effect transistors produced by NXP Semiconductors. It shares the same SOT23 package and symmetrical junction architecture as its counterpart, the BFR30. While both devices utilize identical physical packaging and pin configurations, they are distinguished by their specific electrical parameter ranges, particularly regarding drain current and gate-source voltage thresholds.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. When evaluating alternative components, verify compatibility with the SOT23 package dimensions and ensure that the replacement N-channel JFET meets or exceeds the ±25 V voltage ratings and 250 mW power dissipation limits specified for the BFR31.

FAQ

Are the drain and source pins distinct on the BFR31?

No, the BFR31 features a symmetrical junction design where the drain and source pins are interchangeable.

What is the maximum allowable drain-source voltage for this device?

The maximum drain-source voltage (VDS) is rated at ±25 V.

How does the BFR31 differ from the BFR30?

While both share the same package and structure, they differ in electrical characteristics such as drain current (IDSS) and gate-source voltage ranges.