BFR340FH6327XTSA1

$0.19

Description：RF TRANS NPN 9V 14GHZ PG-TSFP-3
Series：-

SKU:89b00f4a79df Category: Bipolar RF Transistors Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 9V 14GHZ PG-TSFP-3
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：9V
Frequency - Transition：14GHz
Noise Figure (dB Typ @ f)：0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
Gain：13dB ~ 28dB
Power - Max：75mW
DC Current Gain (hFE) (Min) @ Ic, Vce：90 @ 5mA, 3V
Current - Collector (Ic) (Max)：20mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-723
Supplier Device Package：PG-TSFP-3
Grade：-
Qualification：-

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BFR340FH6327XTSA1

Overview

The BFR340FH6327XTSA1 is an NPN silicon RF bipolar junction transistor manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 6 V and a transition frequency of 14 GHz. The device supports a continuous collector current of 20 mA with a power dissipation rating of 75 mW. Packaged in the SOT-723 (TSFP-3) surface-mount format, it provides a minimum DC current gain (hFE) of 90. This component is designed for high-frequency signal amplification applications requiring compact footprint and reliable performance.

Feature Summary

High-speed operation capability up to 14 GHz transition frequency
Low noise performance suitable for sensitive RF front-end stages
Compact SMD package design for automated assembly integration

Applications

RF amplifier circuits
Low-noise amplifier (LNA) stages
Wireless communication transceivers

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape specifications. Confirm that the requested quantity aligns with the required reel or cut-tape requirements. Check the lifecycle status as components may be subject to obsolescence notices. Ensure compatibility with standard surface-mount reflow profiles during the procurement process.

Selection Notes

Select this component when a low-voltage, high-frequency NPN transistor is required for space-constrained designs. The 6 V rating limits suitability for higher voltage power stages. Consider the 20 mA current limit for output drive capabilities. Evaluate thermal management needs based on the 75 mW dissipation rating within the small outline package constraints.

Part Context

This part belongs to Infineon's portfolio of silicon RF transistors optimized for wireless applications. It serves as a specialized active component for signal processing in modern communication devices. The series focuses on balancing gain, noise figure, and power efficiency for consumer electronics and industrial radio systems.