BFR340L3E6327XTMA1

Overview

The BFR340L3E6327XTMA1 is an NPN silicon RF bipolar transistor from Infineon Technologies, designed for high-frequency applications up to 14 GHz. It operates within a collector-emitter voltage (VCEO) of 6 V and an emitter-base voltage (VEBO) of 2 V. The device supports a maximum DC collector current of 10 mA with a power dissipation (Pd) of 60 mW. It functions in a single configuration using SMD/SMT mounting in a TSLP-3 package. The component withstands temperatures between -65°C and +150°C.

Feature Summary

• Optimized for radio frequency signal amplification in silicon technology
• Designed for surface-mount integration in compact electronic assemblies
• Capable of stable operation across extended industrial temperature ranges

Applications

• RF signal amplification stages
• Wireless communication modules
• High-frequency circuit design

Procurement Notes

Verify the specific ordering suffix E6327XTMA1 against official Infineon documentation to confirm tape-and-reel packaging details. Confirm RoHS compliance status through the manufacturer's product compliance database before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits requiring low-power RF amplification at frequencies up to 14 GHz. Ensure the system layout accommodates the TSLP-3 package dimensions and that thermal management strategies align with the 60 mW power dissipation limit under expected operating conditions.

Part Context

This part belongs to the BFR340L3 series of RF transistors. It shares the same electrical characteristics as the BFR 340L3 E6327 but utilizes the XTMA1 suffix to denote specific manufacturing and packaging configurations defined by Infineon Technologies.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.