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Product Detailed Parameters
- Description：BFR35 - LOW-NOISE SI TRANSISTORS
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- Transistor Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Current - Collector (Ic) (Max)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The BFR35AP is an NPN silicon RF bipolar transistor manufactured by Infineon Technologies, designed for high-frequency applications up to 5 GHz. It operates with a maximum collector-emitter voltage (VCEO) of 15 V and an emitter-base voltage (VEBO) of 2.5 V. The device supports a maximum DC collector current of 45 mA and dissipates up to 280 mW of power. It is qualified under the AEC-Q100 automotive standard and functions within a temperature range of -65 °C to +150 °C. Packaged in a compact SOT-23 surface-mount format, it weighs approximately 8 mg.
Feature Summary
- Automotive-grade qualification compliant with AEC-Q100 standards for reliability
- Silicon NPN technology optimized for radio frequency signal processing
- High thermal stability supporting operation up to 150 °C junction temperature
Applications
- RF amplification stages in automotive communication modules
- Signal processing circuits requiring high-frequency performance
- General-purpose RF switching applications in vehicle electronics
Procurement Notes
Verify component authenticity through authorized distribution channels or direct manufacturer verification. Confirm that the specific ordering suffix matches the required tape-and-reel packaging configuration. Ensure compliance with RoHS directives and check for any end-of-life notifications regarding production status before finalizing procurement plans.
Selection Notes
Select this component when designing circuits requiring an NPN RF transistor with AEC-Q100 certification. Consider the 15 V voltage limit and 45 mA current capacity against circuit demands. Evaluate the SOT-23 package constraints for PCB layout and verify thermal management requirements given the 280 mW dissipation rating at elevated temperatures.
Part Context
This part belongs to the BFR35 series of RF bipolar transistors from Infineon Technologies. It utilizes standard silicon planar technology housed in a leaded SOT-23 package. The device is distinct from power MOSFETs like the IPG series, focusing specifically on small-signal RF performance rather than high-power switching capabilities.
Replacement Considerations
Cross-reference with other AEC-Q100 qualified NPN RF transistors offering similar 5 GHz frequency response and 15 V ratings. Verify pinout compatibility and thermal characteristics before substituting.
