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Product Detailed Parameters
- Description：RF TRANS NPN 9V 14GHZ TSLP-3-1
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：9V
- Frequency - Transition：14GHz
- Noise Figure (dB Typ @ f)：1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
- Gain：11.5dB ~ 16dB
- Power - Max：210mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：90 @ 15mA, 3V
- Current - Collector (Ic) (Max)：35mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-101, SOT-883
- Supplier Device Package：PG-TSLP-3-1
- Grade：-
- Qualification：-
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Overview
The BFR360L3E6765XTMA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It operates with low voltage and low current, making it suitable for low noise amplifiers and oscillators up to 3.5 GHz. The device features a minimum noise figure of 1.0 dB at 1.8 GHz and a transition frequency of 14 GHz. Key electrical parameters include a collector-emitter breakdown voltage of 9 V, a maximum collector current of 35 mA, and a total power dissipation of 210 mW. It is housed in a Pb-free TSLP-3-1 package.
Feature Summary
- Low noise figure of 1.0 dB at 1.8 GHz
- Transition frequency of 14 GHz
- Collector-emitter breakdown voltage of 9 V
- Maximum collector current of 35 mA
Applications
- Low noise amplifiers (LNAs)
- Oscillators up to 3.5 GHz
- RF signal processing circuits
Procurement Notes
Verify the component's authenticity through official Infineon channels or authorized distributors. Confirm the part number matches BFR360L3E6765XTMA1 exactly. Check for RoHS compliance and AEC-Q101 qualification status if required for automotive applications. Ensure proper ESD handling precautions are followed during storage and assembly.
Selection Notes
Consider the BFR360L3E6765XTMA1 for designs requiring low noise performance at frequencies up to 3.5 GHz. Its low voltage operation makes it suitable for battery-powered devices. Evaluate thermal management requirements given the 210 mW power dissipation limit. Compare its noise figure and gain characteristics against other RF transistors in the same frequency range.
Part Context
This component belongs to Infineon's BFR series of low noise silicon bipolar RF transistors. It is designed for high-frequency applications where low noise and high gain are critical. The TSLP-3-1 package provides a compact solution for surface-mount technology. The E6765 suffix indicates specific packaging and reel configuration details.
Replacement Considerations
No direct replacement parts are listed in the provided documentation. Consider consulting Infineon's official replacement guide or contacting technical support for equivalent components.
