BFR380FH6327XTSA1

Overview

The BFR380FH6327XTSA1 is a low-profile linear silicon NPN RF bipolar transistor from Infineon Technologies. It operates with a collector-emitter voltage (VCEO) of 6 V and a maximum total power dissipation of 380 mW. At 1.8 GHz, it achieves a minimum noise figure of 1.1 dB at 8 mA bias current and a maximum power gain of 13.5 dB at 40 mA. The device provides an output third-order intercept point (OIP3) of 29 dBm and a transition frequency (fT) up to 14 GHz. It is housed in a TSFP-3-1 package.

Feature Summary

• Low noise performance suitable for sensitive receiver front-ends
• High linearity characterized by high OIP3 values
• Cost-competitive design within the established third-generation RF family

Applications

• Low noise amplifiers (LNAs) for DVB-T/H
• LNAs for TV white space applications
• Low noise, high linearity amplifiers for sub-1 GHz ISM band applications

Procurement Notes

Verify component authenticity through authorized channels. Confirm datasheet revision status prior to implementation. Ensure ESD handling precautions are strictly followed during storage and assembly. Validate thermal management requirements against absolute maximum ratings to maintain reliability under operating conditions.

Selection Notes

Select this component for designs requiring low noise figures below 1.5 dB in the sub-3.5 GHz range. Evaluate bias currents between 8 mA and 40 mA to optimize the trade-off between noise performance and linearity. Ensure the TSFP-3-1 footprint matches the PCB layout constraints.

Part Context

This part belongs to Infineon’s third-generation RF bipolar transistor family. It is designed as a low-noise device based on silicon technology. The product is qualified for industrial applications according to JEDEC standards.

Replacement Considerations

Consult official documentation for direct substitutes. Verify pinout compatibility and electrical parameters such as VCEO and fT before replacing.