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The BFR520T is a silicon NPN wideband transistor housed in a plastic SOT416 (SC-75) surface-mount package. It is designed for high-frequency applications up to 9 GHz, with typical use cases operating at signal frequencies up to 2 GHz. Key electrical parameters include a maximum transition frequency of 9 GHz and a maximum unilateral power gain of 15 dB at 900 MHz. The device supports a DC collector current of 70 mA and operates with a collector-emitter voltage limit of 15 V. Total power dissipation is rated at 150 mW when the soldering point temperature is maintained at or below 75 °C.
Verify the specific ordering suffix against the manufacturer's current product status page before purchase. Confirm that the component meets the required RoHS compliance standards for the intended market. Ensure the supply chain provides valid traceability documentation. Check for any recent datasheet revisions that may affect pinout or thermal characteristics. Validate compatibility with existing assembly processes.
Select this component for designs requiring high-speed amplification in the UHF and microwave ranges. Evaluate the thermal resistance from junction to soldering point to ensure adequate heat dissipation within the system constraints. Consider the low noise figure requirements for front-end receiver stages. Verify that the operating voltage and current levels remain within the absolute maximum ratings to prevent device degradation.
This part belongs to the NXP discrete semiconductor portfolio, specifically categorized as an RF small signal transistor. It is engineered for integration into analog and digital cellular telephone front ends and radar detectors. The SOT416 package allows for compact PCB layouts while maintaining necessary RF performance characteristics for consumer electronics.
No public confirmed substitute part numbers are available in the provided documentation.