BFR843EL3E6327XTSA1

Overview

The BFR843EL3 is a low noise dual band pre-matched RF bipolar transistor in a TSLP-3-10 package. It features high transition frequency for best-in-class noise performance at high frequencies, with NFmin of 1 dB at 2.4 GHz and 1.15 dB at 5.5 GHz (VCE=1.8 V, IC=8 mA). Maximum power gain reaches 24 dB at 2.4 GHz and 21.5 dB at 5.5 GHz (VCE=1.8 V, IC=15 mA). The device supports 20 dBm maximum RF input power and 1 kV HBM ESD hardness. It operates at low voltages including 1.2 V and 1.8 V, suitable for WLAN, LTE, WiMAX, and satellite navigation systems.

Feature Summary

• Combines high end RF performance with robustness, supporting 20 dBm maximum RF input power and 1 kV HBM ESD hardness.
• Delivers best in class noise performance at high frequencies due to high transition frequency.
• Provides high gain across broadband ranges from 450 MHz to 10 GHz.
• Designed for low voltage applications such as 1.2 V and 1.8 V supplies.

Applications

• Wireless communications: WLAN 2.4 GHz and 5-6 GHz bands
• Broadband LTE or WiMAX LNA
• Satellite navigation systems (GPS, GLONASS, BeiDou, Galileo)
• Satellite C-band LNB (1st and 2nd stage LNA)

Procurement Notes

Verify the ordering code BFR843EL3E6327XTSA1 matches the required TSLP-3-10 package and marking code T2. Confirm industrial qualification per JEDEC standards. Ensure handling precautions are observed due to ESD sensitivity. Check reel quantity specifications if bulk procurement is planned. Validate supply chain authenticity through authorized Infineon channels.

Selection Notes

Select this component for designs requiring low noise figure and high linearity in dual-band RF front ends. Ensure bias conditions align with the specified 1.8 V collector-emitter voltage for optimal AC characteristics. Consider the integrated feedback capacitance when designing matching networks. Verify thermal management capabilities given the 125 mW total power dissipation limit.

Part Context

This part belongs to Infineon's BFR843 series of low noise broadband pre-matched RF bipolar transistors. It is specifically engineered for high-speed, low-power consumption applications in wireless communication devices. The device integrates internal matching to simplify circuit design while maintaining robust RF performance across multiple frequency bands.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Engineers should consult Infineon directly for alternative components with similar electrical characteristics and package dimensions.

FAQ

What is the minimum noise figure at 5.5 GHz?

The minimum noise figure (NFmin) is 1.15 dB at 5.5 GHz, measured at VCE = 1.8 V and IC = 8 mA.

Is the device qualified for industrial temperature ranges?

Yes, the BFR843EL3 is qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

What is the maximum RF input power rating?

The device supports a maximum RF input power of 20 dBm when matched to 50 Ω at f = 1.9 GHz.