BFR92A,215

Overview

The BFR92A,215 is an NPN wideband transistor manufactured by NXP Semiconductors in a plastic SOT23 surface-mount package. It is designed for RF applications requiring high power gain and low noise. Key electrical parameters include a maximum collector-emitter voltage of 15 V, a DC collector current limit of 25 mA, and a total power dissipation of 300 mW at a soldering point temperature of 95 °C or less. The device features a transition frequency of 5 GHz at 15 mA and 10 V. Maximum unilateral power gain is specified as 14 dB at 1 GHz and 8 dB at 2 GHz under standard test conditions. The typical noise figure is 2.1 dB at 1 GHz.

Feature Summary

• High power gain suitable for RF amplification stages
• Low noise figure optimized for sensitive receiver front-ends
• Low intermodulation distortion for linear signal processing
• Wideband operation up to 5 GHz transition frequency

Applications

• RF wideband amplifiers
• Oscillators

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current product status documentation. Confirm that the component meets all required environmental standards, such as RoHS compliance, prior to integration into final assemblies. Ensure thermal management strategies align with the specified junction-to-soldering point thermal resistance limits during design validation.

Selection Notes

Select this component when designing circuits requiring a single NPN transistor with wideband characteristics up to 5 GHz. Consider the SOT23 package constraints for PCB layout and thermal dissipation. Evaluate the trade-off between bias current and noise figure, as minimum noise occurs at lower currents while gain peaks at higher currents. Verify compatibility with the PNP complement BFT92 if complementary push-pull topologies are required.

Part Context

The BFR92A belongs to the BFR92 series of NPN silicon RF transistors produced by NXP Semiconductors. This series is engineered for general-purpose RF wideband applications. The device utilizes a planar silicon technology housed in a compact SOT23 plastic envelope. It serves as a foundational active component in analog RF circuit design, particularly where size and performance balance are critical.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.