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The BFR92A,235 is an NPN wideband RF bipolar transistor manufactured by NXP Semiconductors. It operates at a transition frequency of 5 GHz with a collector-emitter breakdown voltage of 15 V and an emitter-base voltage of 2 V. The device supports a continuous collector current of 25 mA and dissipates up to 300 mW of power. Packaged in a SOT-23 (UMT) surface-mount format on a reel, it is designed for high-frequency applications requiring low noise figures and high power gain.
Verify the specific ordering suffix against official NXP documentation to confirm package type and tape/reel specifications. Confirm lifecycle status as obsolete or active through authorized distributors. Ensure compatibility with existing PCB footprints and thermal management requirements before integration into new designs.
Select this component for designs requiring NPN silicon transistors with 5 GHz bandwidth. Consider the SOT-23 package constraints for space-limited applications. Evaluate thermal dissipation needs relative to the 300 mW limit. Verify that the 15 V collector-emitter voltage rating meets circuit operating conditions.
This part belongs to the BFR92 series of NPN wideband transistors from NXP. It serves as a specialized RF component distinct from general-purpose switching transistors. The BFT92 is noted as its PNP complement within the same product family, offering symmetrical design options for push-pull configurations.
Public confirmed substitute part numbers are not available in the provided documentation. Designers should consult NXP technical support or authorized distributor databases for cross-reference recommendations due to the component's obsolete status.