BFR92AW,135

Overview

The BFR92AW,135 is a silicon NPN wideband transistor manufactured by NXP Semiconductors. It is encapsulated in a plastic SOT323 (S-mini) surface-mount package with gold metallization for reliability. The device operates with a collector-emitter voltage of 15 V and supports a DC collector current of 25 mA. Key electrical parameters include a transition frequency of 5 GHz at 15 mA and 10 V, and a maximum unilateral power gain of 14 dB at 1 GHz. Total power dissipation is rated at 300 mW up to a soldering point temperature of 93 °C. The junction temperature limit is 150 °C.

Feature Summary

• High power gain suitable for RF applications
• Gold metallization ensures excellent reliability
• Compact SOT323 (S-mini) surface-mount package

Applications

• RF amplifiers
• Mixers
• Oscillators

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging orientation and reel specifications. Confirm product status as discontinued or obsolete through authorized distributors before design finalization. Ensure compliance with RoHS directives and check for any relevant PCN notices regarding manufacturing changes or end-of-life notifications.

Selection Notes

Select this component for designs requiring high gain and low noise in the sub-GHz range. Verify that the required operating frequency does not exceed the specified transition frequency limits under actual bias conditions. Ensure thermal management accommodates the 300 mW dissipation rating within the SOT323 package constraints.

Part Context

This part belongs to the BFR92 series of NPN wideband transistors. The BFR92AW variant utilizes the SOT323 package, sharing the same internal crystal structure as the larger SOT23 version, the BFR92A. This family is designed for general-purpose RF signal processing tasks where compact size and high performance are required.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.